Kirkland, Washington. Alliance Memory announced the release of its 5GB ASFC5G31P3-51BIN and 10GB ASFC10G31P3-51BIN industrial-grade 3D pSLC embedded multi-media card (eMMC) integrating reliable 3D pSLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a 11.5 mm by 13 mm by 1 mm 153-ball FBGA form.

Kirkland, Washington. Alliance Memory released its expanded series of high-speed CMOS mobile low-power SDRAMs consisting of 16Gb and 32Gb LPDDR4X devices. Low-voltage operation of 0.6V, the 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN deliver enhanced efficacy in battery life.  

Kirkland, Washington. Alliance Memory is expanding its 3V multiple input/output serial NOR flash memory products by welcoming its 4Mb (AS25F304MD-10S1IN) and 16Mb (AS25F316MQ-10S1IN) devices in the SOP8 Narrow Body (150mils) package. The devices have a read performance of 104MHz with accelerated program and erase times down to 1.1ms (4Mb) and 2.6ms (16Mb).

KIRKLAND, Wash. —Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in a variety of densities.

Kirkland, Washington. Alliance Memory is now delivering its industrial -grade embedded multi-media card (eMMC), the ASFC16G31M-51BIN. The card incorporates NAND flash memory with an eMMC controller and flash transition layer (FTL) management software for efficient performance with wear leveling and bad block management. The eMMC arrives compliant with the JEDEC eMMC v5.1 industry standard. Ideal applications include smart watches, digital TVs, VR and AR headsets, digital cameras, CCTV, automation, point-of-sale systems, and more.

KIRKLAND, Washington. Alliance Memory stated it has extended its portfolio of CMOS DDR4 SDRAMs with a 16Gb device in the 96-ball FBGA form factor, the AS4C1G16D4-062BCN. The DDR4 SDRAM operates at a low +1.2V (±0.06V). It was developed and qualified for utilization in 5g designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs.

Kirkland, Wash. Alliance Memory shared that it has extended its portfolio of low power asynchronous SRAM (LPSRAM) devices. The AS6CE1016A (1Mb) and AS6CE4016B (4Mb) integrate an error-correction code (ECC) for a more reliable LPSRAM When juxtaposed to previous-generation technology, the LPSRAM’s deliver upgraded failure in time (FIT), mean time to failure (MTTF), and characteristics with reduced soft error rates (SER).